1994. 3. 2
1/2
SEMICONDUCTOR
TECHNICAL DATA
BC237/8/9
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 0
GENERAL PURPOSE APPLICATION.
LOW NOISE AMPLIFIER APPLICATION.
FEATURES
High Voltage : BC237 V
CEO
=45V.
Low Noise : BC239 NF=0.2dB(Typ.), 3dB(Max.)
(V
CE
=6V, I
C
=0.1mA, f=1kHz).
For Complementary With PNP type BC307/308/309.
MAXIMUM RATING (Ta=25 )
TO-92
DIM
MILLIMETERS
A
B
C
D
F
G
H
J
K
L
4.70 MAX
4.80 MAX
3.70 MAX
0.45
1.00
1.27
0.85
0.45
14.00 0.50
0.55 MAX
2.30
D
1 2
3
B
A
J
K
G
H
F
F
L
E
C
E
C
M
N
0.45 MAX
M
1.00
N
1. COLLECTOR
2. BASE
3. EMITTER
+
_
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
BC237
V
CBO
50
V
BC238
30
BC239
30
Collector-Emitter Voltage
BC237
V
CEO
45
V
BC238
20
BC239
20
Emitter-Base Voltage
BC237
V
EBO
6
V
BC238
5
BC239
5
Collector Current
BC237
I
C
100
mA
BC238
100
BC239
50
Emitter Current
BC237
I
E
-100
mA
BC238
-50
BC239
-50
Collector Power Dissipation
P
C
625
mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
1994. 3. 2
2/2
BC237/8/9
Revision No : 0
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CBO
V
CB
=50V, I
E
=0
-
-
15
nA
DC Current Gain
(Note)
BC237
h
FE
V
CE
=5V, I
C
=2mA
120
-
460
BC238
120
-
800
BC239
180
-
800
Collector-Emitter
Saturation Voltage
BC237
V
CE(sat)
I
C
=100mA, I
B
=5mA
-
-
0.6
V
BC238
-
-
0.6
BC239
I
C
=10mA, I
B
=0.5mA
-
-
0.2
Base-Emitter
Saturation Voltage
BC237
V
BE(sat)
I
C
=100mA, I
C
=5mA
-
-
1.05
V
BC238
-
-
1.05
BC239
I
C
=10mA, I
B
=0.5mA
-
-
0.83
Base-Emitter Voltage
V
BE(ON)
V
CE
=5V, I
C
=2mA
0.55
-
0.7
V
Transition Frequency
f
T
V
CE
=5V, I
C
=10mA, f=100MHz
150
250
-
MHz
Collector Output Capacitance
C
ob
V
CB
=10V, f=1MHz, I
E
=0
-
-
4.5
pF
Noise Figure
BC237
NF
V
CE
=6V, I
C
=0.1mA
R
g
=10k , f=1kHz
-
1.0
10
dB
BC238
-
1.0
10
BC239
-
0.2
3.0
CLASSIFICATION
A
B
C
h
FE
BC237
120 220
180 460
-
BC238
120 220
180 460
380 800
BC239
-
180 460
380 800
NOTE : According to the Value of h
FE
the BC237, BC238, BC239 are classified as follows.
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